BUK9609-40B NXP Semiconductors, BUK9609-40B Datasheet - Page 9

• Manufacturer Part Number: BUK9609-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9609-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
V
10
DD
= 14 V
20
V
DD
(A)
I
S
100
= 32 V
75
50
25
30
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
03nm58
(nC)
40
0.3
Rev. 02 — 7 June 2010
T
j
= 175 ° C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
5000
3750
2500
1250
0.9
0
10
T
as a function of drain-source voltage; typical
values
j
−2
= 25 ° C
V
SD
03nm57
(V)
N-channel TrenchMOS logic level FET
1.2
10
−1
C
C
C
iss
oss
rss
BUK9609-40B
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nm64
(V)
10
2
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