BUK9609-40B NXP Semiconductors, BUK9609-40B Datasheet - Page 8

• Manufacturer Part Number: BUK9609-40B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9609-40B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
75
50
25
20
15
10
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
3
3.2
T
j
3.4 3.6 3.8
1
= 175 ° C
100
2
4
T
j
= 25 ° C
200
Label is V
5
3
I
All information provided in this document is subject to legal disclaimers.
D
V
GS
GS
(A)
03nm60
03nm63
(V)
10
(V)
300
4
Rev. 02 — 7 June 2010
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
1.5
0.5
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9609-40B
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
T
T
j
j
(°C)
( ° C)
03ng52
03aa27
180
180
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