BUK7907-55AIE NXP Semiconductors, BUK7907-55AIE Datasheet - Page 8

• Manufacturer Part Number: BUK7907-55AIE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7907-55AIE_2
Product data sheet
Fig 7.
Fig 9.
V
R DSon
GS(th)
(V)
(mΩ)
12
10
5
4
3
2
1
0
8
6
4
2
0
−60
of drain current; typical values
junction temperature
Drain-source on-state resistance as a function
Gate-source threshold voltage as a function of
0
20
0
V GS (V) = 5.5
40
60
60
max
min
typ
80
120
6.5
100
T
j
(°C)
7
8
10
03ni67
I D (A)
03aa32
Rev. 02 — 9 February 2009
180
120
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
D
1.5
0.5
a
−1
−2
−3
−4
−5
−6
2
1
0
-60
factor as a function of junction temperature
gate-source voltage
Normalized drain-source on-state resistance
0
N-channel TrenchPLUS standard level FET
0
2
BUK7907-55AIE
min
60
typ
4
120
max
V
© NXP B.V. 2009. All rights reserved.
GS
T
j
03ne89
(V)
( ° C)
03aa35
180
6
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