BUK7907-55AIE NXP Semiconductors, BUK7907-55AIE Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7907-55AIE

Manufacturer Part Number
BUK7907-55AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7907-55AIE
Manufacturer:
NXP
Quantity:
72 000
Part Number:
BUK7907-55AIE
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7907-55AIE_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
−5
Conditions
vertical in still air
see
10
−4
Figure 4
Rev. 02 — 9 February 2009
10
−3
10
−2
N-channel TrenchPLUS standard level FET
10
−1
BUK7907-55AIE
Min
-
-
P
1
Typ
60
-
t
p
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
Max
-
0.55
δ =
03ni29
t
T
p
t
10
Unit
K/W
K/W
5 of 14

Related parts for BUK7907-55AIE