BUK7907-55AIE NXP Semiconductors, BUK7907-55AIE Datasheet - Page 10

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7907-55AIE

Manufacturer Part Number
BUK7907-55AIE
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7907-55AIE
Manufacturer:
NXP
Quantity:
72 000
Part Number:
BUK7907-55AIE
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
BUK7907-55AIE_2
Product data sheet
Fig 15. Drain-sense current as a function of
I D /I sense
600
550
500
450
400
gate-source voltage; typical values
4
8
12
16
V GS (V)
03nj27
20
Rev. 02 — 9 February 2009
Fig 16. Reverse diode current as a function of reverse
100
(A)
I S
80
60
40
20
0
0.0
diode voltage; typical values
N-channel TrenchPLUS standard level FET
0.2
BUK7907-55AIE
0.4
175 °C
0.6
© NXP B.V. 2009. All rights reserved.
0.8
T j = 25 °C
V SD (V)
03ni72
1.0
10 of 14

Related parts for BUK7907-55AIE