BUK7624-55A NXP Semiconductors, BUK7624-55A Datasheet - Page 5

• Manufacturer Part Number: BUK7624-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 08029
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
f = 1 MHz;
V
V
from drain lead 6mm from
package to centre of die
from contact screw on
mounting base to centre of
die SOT78
from upper edge of drain
mounting base to centre of
die SOT404
from source lead to source
bond pad
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 02 — 01 March 2001
and
Figure 12
BUK7524-55A; BUK7624-55A
DS
DS
D
8
GS
L
G
= 25 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
2
1
TrenchMOS™ standard level FET
Typ
3
0.05
2
20
980
240
150
11
56
38
31
4.5
3.5
2.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
Max
4
4.4
10
500
100
24
48
1310
290
210
Unit
V
V
V
V
V
nA
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
nH
5 of 15
A
A