BUK7624-55A NXP Semiconductors, BUK7624-55A Datasheet - Page 3

• Manufacturer Part Number: BUK7624-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08029
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
I D
(A)
50
10 3
10 2
10
1
75
1
P
100
t p
R DSon = V DS / I D
T
125
150
=
T mb ( o C)
t p
T
t
175
03na19
200
Rev. 02 — 01 March 2001
BUK7524-55A; BUK7624-55A
D.C.
Fig 2. Normalized continuous drain current as a
10
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
D 25 C
120
100
80
60
40
20
I
0
D
0
V DS (V)
25
100%
TrenchMOS™ standard level FET
50
75
t p = 10 us
100 us
1 ms
10 ms
100 ms
03nb74
100
© Philips Electronics N.V. 2001. All rights reserved.
10 2
125
150
T mb ( o C)
175
03aa24
200
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