BUK7624-55A NXP Semiconductors, BUK7624-55A Datasheet - Page 2

• Manufacturer Part Number: BUK7624-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 08029
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 02 — 01 March 2001
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
BUK7524-55A; BUK7624-55A
= 20 k
55 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
GS
= 25 A
GS
= 10 V; R
= 10 V
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 39 A;
= 50 ;
TrenchMOS™ standard level FET
Typ
20
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
55
47
106
175
24
48
Max
55
55
47
33
188
106
+175
+175
47
188
76
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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