BUK7611-55B NXP Semiconductors, BUK7611-55B Datasheet - Page 8

• Manufacturer Part Number: BUK7611-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7611-55B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
30
20
10
75
50
25
0
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
T
j
2
= 175 ° C
6
60
6.5
4
7
T
j
= 25 ° C
7.5
6
Label is V GS (V)
120
8
10
I
All information provided in this document is subject to legal disclaimers.
8
D
V
(A)
GS
03nn42
03nn39
(V)
180
Rev. 3 — 31 January 2011
10
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
1.5
0.5
a
5
4
3
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7611-55B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
03ne89
(°C)
( ° C)
03aa32
180
180
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