BUK7611-55B NXP Semiconductors, BUK7611-55B Datasheet - Page 7

• Manufacturer Part Number: BUK7611-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7611-55B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
Label is V
20
2
GS
(V)
2
4
min
10
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
typ
6
14
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
V
DS
(V)
03nn41
03aa35
(V)
Rev. 3 — 31 January 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
40
30
20
10
30
20
10
0
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
25
10
BUK7611-55B
50
15
75
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
03nn40
03nn38
(A)
100
20
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