BUK7611-55B,118 NXP Semiconductors, BUK7611-55B,118 Datasheet
BUK7611-55B,118
Specifications of BUK7611-55B,118
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BUK7611-55B,118 Summary of contents
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... BUK7611-55B N-channel TrenchMOS standard level FET Rev. 3 — 31 January 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...
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... Figure 3 ≤ 10 µ °C; pulsed see Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B Min Max - - [1] Figure [ 338 - 157 -55 175 -55 175 [ [ ...
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... P der (%) 150 200 (° Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 03nn44 = 10 μ 100 μ 100 ms ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7611-55B Product data sheet Conditions see Figure 4 minimum footprint; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Min Typ - - - 50 03nn45 t p δ ...
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... °C j from source lead 6 mm from package to source bond pad ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B Min Typ Max Unit 4 0.02 1 µ 500 µ ...
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... R DSon (mΩ (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of gate-source voltage; typical values ( Forward transconductance as a function of drain current ...
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... Fig 10. Gate-source threshold voltage as a function of 03nn42 Label (V) 7 120 180 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 −60 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nn36 1.5 V ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number BUK7611-55B separated from data sheet BUK75_76_7E11_55B-02. Product data All information provided in this document is subject to legal disclaimers. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 31 January 2011 BUK7611-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 January 2011 Document identifier: BUK7611-55B ...