BUK7606-55B NXP Semiconductors, BUK7606-55B Datasheet - Page 9

• Manufacturer Part Number: BUK7606-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
V
20
DD
= 14 V
40
V
(A)
DD
I
S
100
75
50
25
= 44 V
60
0
0.0
All information provided in this document is subject to legal disclaimers.
Q
G
(nC)
03nl89
80
0.3
Rev. 02 — 21 June 2010
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
6000
4000
2000
C
0.9
0
10
T
as a function of drain-source voltage; typical
values
j
−2
= 25 °C
V
N-channel TrenchMOS standard level FET
SD
03nl88
(V)
1.2
10
−1
BUK7606-55B
1
C
C
C
iss
oss
rss
10
© NXP B.V. 2010. All rights reserved.
V
DS
(V)
03nl95
10
2
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