BUK7606-75B,118 NXP Semiconductors, BUK7606-75B,118 Datasheet

MOSFET N-CH 75V 75A D2PAK

BUK7606-75B,118

Manufacturer Part Number
BUK7606-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7606-75B,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
91nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.6 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0056 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
159 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057112118::BUK7606-75B /T3::BUK7606-75B /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK7606-75B
N-channel TrenchMOS standard level FET
Rev. 03 — 3 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
4.8
Max Unit
75
75
300
5.6
V
A
W
mΩ

Related parts for BUK7606-75B,118

BUK7606-75B,118 Summary of contents

Page 1

... BUK7606-75B N-channel TrenchMOS standard level FET Rev. 03 — 3 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... sup °C; unclamped GS j(init) 03ng89 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µ -55 -55 [ ° Ω ...

Page 4

... DS D Capped due to package 1 Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 03ng87 = 10 μ 100 μ 100 (V) DS Min ...

Page 5

... °C j from source lead to source bond pad ; ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B Min Typ Max Unit 4 0.02 1 µ 500 µ ...

Page 6

... (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 8 DSon ° Drain-source on-state resistance as a function of gate-source voltage; typical values 120 g fs (S) 100 ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03ng99 2.4 a 1.6 0 6.5 10 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 0 −60 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET 8000 C (pF) C iss 6000 4000 C oss 2000 C rss 0 − function of drain-source voltage ...

Page 9

... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7606-75B separated from data sheet BUK75_7606_75B v.2. BUK75_7606_75B v.2 20020920 (9397 750 10278) BUK7606-75B ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 February 2011 BUK7606-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK7606-75B ...

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