BUK7606-55B NXP Semiconductors, BUK7606-55B Datasheet - Page 7

• Manufacturer Part Number: BUK7606-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7606-55B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
350
280
210
140
70
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
20
10
2
9
2
8
7.5
4
min
typ
6
Label is V
7
6.5
6
5.5
5
4.5
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
GS
V
DS
(V)
(V)
03aa35
03nl93
(V)
10
6
Rev. 02 — 21 June 2010
Fig 6.
Fig 8.
R
(mΩ)
(S)
DSon
g
fs
80
60
40
20
12
10
8
6
4
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK7606-55B
15
40
V
© NXP B.V. 2010. All rights reserved.
I
GS
D
(A)
(V)
03nl92
03nl90
20
60
7 of 14