BUK7528-100A NXP Semiconductors, BUK7528-100A Datasheet - Page 8

• Manufacturer Part Number: BUK7528-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7528-100A
Product data sheet
Fig 13. Sub-threshold drain current as a function of
Fig 15. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
1
V
D
DD
DS
50
= 25 A
= 14 V
= V
2 %
2
GS
typical
3
100
V
DD
= 44 V
Q
98 %
All information provided in this document is subject to legal disclaimers.
4
G
003aaf164
V
003aaf166
(nC)
GS
(V)
150
5
Rev. 2 — 26 April 2011
Fig 14. Input, output and reverse transfer capacitances
Fig 16. Source (diode forward) current as a function of
(nF)
(A)
I
C
F
100
80
60
40
20
5
4
3
2
1
0
0
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−2
C
GS
GS
C
C
N-channel TrenchMOS standard level FET
oss
iss
rss
= 0 V; f = 1 MHz
= 0 V
0.2
10
−1
0.4
T
j
BUK7528-100A
= 175 °C
0.6
1
0.8
1.0
10
T
© NXP B.V. 2011. All rights reserved.
j
= 25 °C
V
003aaf165
003aaf167
1.2
DS
V
SDS
(V)
(V)
10
1.4
2
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