BUK7528-55A NXP Semiconductors, BUK7528-55A Datasheet

MOSFET Power RAIL PWR-MOS

BUK7528-55A

Manufacturer Part Number
BUK7528-55A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7528-55A

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
99 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7528-55A,127

Available stocks

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Manufacturer
Quantity
Price
Part Number:
BUK7528-55A
Manufacturer:
NXP
Quantity:
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Part Number:
BUK7528-55A
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7528-55A
N-channel TrenchMOS standard level FET
Rev. 02 — 21 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
T
I
R
T
D
j
mb
j
j(init)
GS
GS
≥ 25 °C; T
= 25 °C
= 34 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
j
D
≤ 175 °C
GS
Low conduction losses due to low
on-state resistance
= 25 A;
≤ 25 V;
= 5 V;
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
23.8 28
-
Max Unit
55
42
99
58
V
A
W
mΩ
mJ

Related parts for BUK7528-55A

BUK7528-55A Summary of contents

Page 1

... BUK7528-55A N-channel TrenchMOS standard level FET Rev. 02 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... ° 100 ° °C; pulsed ° °C mb pulsed °C mb ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A Graphic symbol mbb076 3 Version SOT78A Min Max - - 168 - 99 -55 175 -55 175 - 41 - 163 = 50 Ω ...

Page 3

... Fig 2. 003aaf457 W (%) μs 100 μ 100 (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET 100 100 ≥ Normalized continuous drain current as a function of mounting base temperature 100 DSS 80 ...

Page 4

... Z th(j-mb) (K/W) 1 δ = 0.5 0.2 P 0.1 −1 0.05 10 0.02 0 −2 10 −6 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET Min Typ - - - 60 003aaf458 t p δ (s) p Max Unit 1.5 ...

Page 5

... °C j measured from source lead to source bond pad ; ° ° ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A Min Typ Max = 25 ° -55 ° 4 0. 500 - 2 100 - 2 100 - - ...

Page 6

... V (V) DS Fig 7. 003aaf461 (V) GS Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET 6 °C j Drain-source on-state resistance as a function of drain current; typical values 100 I ...

Page 7

... 100 200 T (°C) j Fig 13. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET 2.5 2 1.5 1 0.5 −100 0 100 factor as a function of junction temperature −1 −2 −3 ...

Page 8

... (V) DS Fig 15. Gate-source voltage as a function of gate 120 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET ° charge; typical values 003aaf469 = 25 ° 1.5 ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7528-55A separated from data sheet BUK7528_7628-55A v.1. BUK7528_7628-55A v.1 20000601 BUK7528-55A Product data sheet ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK7528-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK7528-55A ...

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