BUK7528-100A NXP Semiconductors, BUK7528-100A Datasheet - Page 7

• Manufacturer Part Number: BUK7528-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7528-100A
Product data sheet
Fig 7.
Fig 9.
Fig 11. Normalized drain-source on-state resistance
R
(mΩ)
DS(on)
(A)
I
a
D
200
160
120
2.0
1.5
1.0
0.5
80
40
31
27
23
19
15
0
0
−100
function of drain-source voltage; typical values
of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
5
j
j
= 25 °C
= 25 °C; I
V
GS (V)
2
7
= 20
13.5
10.0
9.0
8.0
7.5
D
= 25 A
0
4
9
11
6
100
T
13
All information provided in this document is subject to legal disclaimers.
8
j
7.0
(°C)
6.5
6.0
5.5
5.0
4.5
003aaf157
V
003aaf159
V
003aaf162
DS
GS
(V)
(V)
200
10
15
Rev. 2 — 26 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
R
V
(mΩ)
DS(on)
GS(th)
(A)
(V)
I
D
100
65
55
45
35
25
15
80
60
40
20
0
5
4
3
2
1
0
−100
of drain current; typical values
function of gate-source voltage; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
I
5
0
D
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
= 1 mA; V
> I
D
x R
2
5.5
DSon
DS
45
0
T
= V
j
BUK7528-100A
= 175 °C
maximum
GS
minimum
6.0
typical
4
100
85
T
6.5
j
= 25 °C
V
7.0
7.5
8.0
6
GS
© NXP B.V. 2011. All rights reserved.
T
I
D
j
V
(V) = 10
(°C)
003aaf158
003aaf160
003aaf163
(A)
GS
(V)
125
200
8
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