BUK7507-30B NXP Semiconductors, BUK7507-30B Datasheet - Page 8

• Manufacturer Part Number: BUK7507-30B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7507-30B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
100
75
50
25
20
15
10
0
5
0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
6
6.5
2
T
j
100
= 175 °C
7 7.5
4
8
T
Label is V
j
200
= 25 °C
9
6
All information provided in this document is subject to legal disclaimers.
I
V
GS
D
GS
(A)
03nm87
03nm90
10
(V)
(V)
Rev. 02 — 22 February 2011
300
8
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
1.5
0.5
5
4
3
2
1
0
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7507-30B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
( ° C)
03aa32
03aa27
180
180
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