BUK7507-55B,127 NXP Semiconductors, BUK7507-55B,127 Datasheet

BUK7507-55B,127

Manufacturer Part Number

BUK7507-55B,127

Description

MOSFET N-CH 55V 75A TO220AB

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK7507-55B127.pdf (15 pages)

Specifications of BUK7507-55B,127

Package / Case

TO-220AB-3

Mounting Type

Through Hole

Power - Max

203W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

53nC @ 10V

Vgs(th) (max) @ Id

4V @ 1mA

Current - Continuous Drain (id) @ 25° C

75A

Drain To Source Voltage (vdss)

55V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7.1 mOhm @ 25A, 10V

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0071 Ohm @ 10 V

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

119 A

Power Dissipation

203000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

934057706127::BUK7507-55B::BUK7507-55B

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1. Product proﬁle

2. Pinning information

Table 1:

[1]

It is not possible to make connection to pin 2 of the SOT404 package.

Description

gate (g)

drain (d)

source (s)

mounting base,

connected to

drain (d)

Pinning - SOT78 and SOT404, simpliﬁed outlines and symbol

1.1 Description

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Product availability:

BUK7507-55B in SOT78 (TO-220AB)

BUK7607-55B in SOT404 (D

BUK75/7607-55B

TrenchMOS™ standard level FET

Rev. 01 — 15 May 2003

Very low on-state resistance.

175 C rated

Automotive systems

Motors, lamps and solenoids

Simpliﬁed outline

DS(AL)S

SOT78 (TO-220AB)

75 A

1 2

351 mJ

MBK106

SOT404 (D

-PAK).

-PAK)

MBK116

Q101 compliant

Standard level compatible.

12 V and 24 V loads

General purpose power switching.

tot

DSon

203 W.

= 5.8 m (typ)

Symbol

MBB076

Product data

Related parts for BUK7507-55B,127

BUK7507-55B,127 Summary of contents

Page 1

... Rev. 01 — 15 May 2003 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7507-55B in SOT78 (TO-220AB) BUK7607-55B in SOT404 (D 1.2 Features Very low on-state resistance. 175 C rated 1.3 Applications ...

Page 2

Philips Semiconductors 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage (DC drain-gate voltage (DC) DGR V gate-source voltage (DC drain current (DC) ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base temperature Limit ...

Page 4

Philips Semiconductors 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-mb) mounting base R thermal resistance from junction to th(j-a) ambient SOT78 package SOT404 package 4.1 Transient thermal impedance 1 = 0.5 Z ...

Page 5

Philips Semiconductors 5. Characteristics Table 4: Characteristics unless otherwise speciﬁed. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 4: Characteristics …continued unless otherwise speciﬁed. j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 11235 Product data Conditions Min ...

Page 7

Philips Semiconductors 300 Label ( 8.5 ( 200 7.5 7 6.5 100 6 5 300 ...

Page 8

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 9

Philips Semiconductors 100 175 Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 10

Philips Semiconductors 6. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 11

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 12

Philips Semiconductors 7. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reﬂow soldering footprint for SOT404. 9397 750 11235 Product data 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands ...

Page 13

Philips Semiconductors 8. Revision history Table 5: Revision history Rev Date CPCN Description 01 20030515 - Product data (9397 750 11235) 9397 750 11235 Product data BUK75/7607-55B TrenchMOS™ standard level FET Rev. 01 — 15 May 2003 © Koninklijke Philips ...

Page 14

Philips Semiconductors Philips Semiconductors 9. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualiﬁcation III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing ...

Page 15

Philips Semiconductors Contents 1 Product proﬁ 1.1 Description . . . . . ...

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