BUK7507-55B NXP Semiconductors, BUK7507-55B Datasheet

MOSFET Power HIGH PERF TRENCHMOS

BUK7507-55B

Manufacturer Part Number
BUK7507-55B
Description
MOSFET Power HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7507-55B

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0071 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
119 A
Power Dissipation
203 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7507-55B,127

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
I
P
Static characteristics
R
Avalanche ruggedness
E
V
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
BUK7507-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive systems
Continuous current is limited by package.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
T
V
see
T
V
T
see
I
R
T
V
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 44 V; T
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
j
mb
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 55 V;
Figure
= 25 °C;
= 10 V;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
Figure 2
Figure 3
11;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
5.8
-
17
Max Unit
55
75
203
7.1
351
-
V
A
W
mΩ
mJ
nC

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BUK7507-55B Summary of contents

Page 1

... BUK7507-55B N-channel TrenchMOS standard level FET Rev. 2 — 26 July 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Max - -20 20 [1] Figure [1] Figure [2] Figure 1; - 119 - 478 - 203 -55 175 -55 ...

Page 4

... P der (%) 150 200 T (°C) mb Fig DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature (V) DS 03na19 200 T (° ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7507-55B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 vertical in still air - All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Typ Max - - 0. 03nn67 t p δ = ...

Page 6

... °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/ - ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B Min Typ Max Unit 4 0.02 1 µ 500 µ 100 100 ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 25 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...

Page 8

... GS Fig 10. Gate-source threshold voltage as a function of 03nn64 7 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET C ISS C OSS C RSS function of drain-source voltage; typical values 03nn58 1.5 V ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 11

... Release date BUK7507-55B v.2 20110726 • Modifications: Type number BUK7507-55B separated from data sheet BUK75_7607_55B_1. • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 July 2011 BUK7507-55B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 July 2011 Document identifier: BUK7507-55B ...

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