BUK7506-55A NXP Semiconductors, BUK7506-55A Datasheet - Page 6

• Manufacturer Part Number: BUK7506-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7506-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
12
14
20
2
10 9
2
8.5
4
min
typ
6
V
4
GS
(V) = 7.5
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03aa35
03nf29
5.5
4.5
6.5
(V)
Rev. 03 — 2 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
80
60
40
20
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
40
BUK7506-55A
60
15
V
© NXP B.V. 2011. All rights reserved.
80
GS
I
(V)
D
03nf28
03nf26
(A)
100
20
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