BUK7506-55A NXP Semiconductors, BUK7506-55A Datasheet - Page 2

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7506-55A

Manufacturer Part Number
BUK7506-55A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
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Part Number:
BUK7506-55A
Manufacturer:
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Quantity:
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2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7506-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7506-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol
Avalanche ruggedness
E
DS(AL)S
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 2 February 2011
Simplified outline
SOT78A (TO-220AB)
Conditions
I
R
T
D
…continued
j(init)
GS
= 75 A; V
= 50 Ω; V
= 25 °C; unclamped
1 2
mb
3
sup
GS
≤ 55 V;
N-channel TrenchMOS standard level FET
= 10 V;
Graphic symbol
BUK7506-55A
mbb076
G
Min
-
© NXP B.V. 2011. All rights reserved.
D
S
Typ
-
Version
SOT78A
Max Unit
1.1
2 of 13
J

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