BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 9

• Manufacturer Part Number: BUK7210-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7210-55B_1
Product data sheet
Fig 11. Source current as a function of source-drain
Fig 13. Gate-source voltage as a function of gate
(A)
I
S
V
(V)
100
GS
7.5
2.5
75
50
25
10
0
5
0
voltage; typical values
charge; typical values
0.0
0
VDD = 14 V
0.3
10
Tj = 185 °C
0.6
20
VDD = 44 V
0.9
30
Tj = 25 °C
Q
003aac281
003aac280
V
SD
G
(nC)
(V)
Rev. 01 — 11 December 2008
1.2
40
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
C (pF)
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
V
V
V
V
-1
GS(pl)
N-channel TrenchMOS standard level FET
DS
GS(th)
GS
Q
GS1
I
1
Q
D
GS
Q
GS2
BUK7210-55B
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2008. All rights reserved.
DS
C
003aaa508
003aac278
C
C
(V)
iss
oss
rss
10
2
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