BUK7210-55B NXP Semiconductors, BUK7210-55B Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK7210-55B

Manufacturer Part Number
BUK7210-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
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Part Number:
BUK7210-55B
Manufacturer:
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Quantity:
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NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7210-55B_1
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th (j-mb)
10
10
10
-1
-2
-3
1
1e-6
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
d = 0.5
0.2
0.1
0.05
0.02
single shot
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
10
-5
Conditions
see
Mounted on a printed circuit board; vertical
in still air.; minimum footprint
Figure 4
10
-4
Rev. 01 — 11 December 2008
10
-3
N-channel TrenchMOS standard level FET
10
-2
Min
-
-
BUK7210-55B
10
P
-1
Typ
-
75
t
p
T
t
p
© NXP B.V. 2008. All rights reserved.
(s)
003aac273
δ =
Max
0.95
-
T
t
p
t
1
Unit
K/W
K/W
5 of 14

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