BUK7210-55B/C1,118 NXP Semiconductors, BUK7210-55B/C1,118 Datasheet

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BUK7210-55B/C1,118

Manufacturer Part Number
BUK7210-55B/C1,118
Description
MOSFET N-CH 55V SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7210-55B/C1,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Mounting Type
Surface Mount
Gate Charge Qg
35 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 185 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Power - Max
-
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934062108118
Power MOSFETs
for Automotive Applications
Performance, quality, reliability

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BUK7210-55B/C1,118 Summary of contents

Page 1

Power MOSFETs for Automotive Applications Performance, quality, reliability ...

Page 2

Automotive Power MOSFETs NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive applications means NXP can deliver ...

Page 3

From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, NXP power semiconductors are the common answer to many automotive system power problems. Our automotive power portfolio draws on a clear technology ...

Page 4

LFPAK LFPAK (SOT669) for high-density applications NXP MOSFETs housed in the compact, thermally-enhanced Loss Free PAcKage (LFPAK) are optimized for high-density automotive applications. LFPAK delivers the ultimate combination with ultra-low package resistance, superior reliability and thermal performance. All this in ...

Page 5

KGD program KGD for high-current & high-temperature applications NXP’s Known Good Die (KDG) technology overcomes the inspection and testing issues traditionally associated with the bare-die, wafer-based products typically needed for high- current and high-temperature applications. NXP’s specialized process first singulates ...

Page 6

Selection Guides 30 V N-channel Automotive TrenchMOS R (max) R (max) I (max) DSon DSon D @ @25 °C (mΩ) (mΩ) (A) 1.5 100 1.7 1.8 100 1.8 100 2.1 2.4 2.8 75 2.5 2.7 75 2.7 ...

Page 7

V N-channel Automotive TrenchMOS R (max) R (max) I (max) DSon DSon D @ @25 °C (mΩ) (mΩ) (A) 1.9 100 2 100 2.3 100 2.4 2.6 100 2.8 3.2 100 3.1 75 3.2 100 3.4 ...

Page 8

... BUK762R6-55C BUK662R7-55C BUK663R0-55C BUK964R2-55B BUK764R0-55B BUK664R4-55C BUK9606-55B BUK9606-55A BUK7606-55B BUK7606-55A BUK6607-55C BUK6207-55C BUK9608-55B BUK7607-55B BUK9608-55A BUK9609-55A BUK7608-55A BUK9610-55A BUK7609-55A BUK9Y12-55B BUK9611-55A BUK9612-55B BUK9212-55B BUK7610-55AL BUK7210-55B BUK7611-55B BUK7212-55B BUK7Y12-55B BUK9614-55A BUK9215-55A BUK7614-55A BUK7215-55A SC-73 (SOT223) 6.5 x 3.5 x 1.65 ...

Page 9

V N-channel Automotive TrenchMOS R (max) R (max) I (max) DSon DSon D @ @25 °C (mΩ) (mΩ ...

Page 10

Selection Guides 75 V N-channel Automotive TrenchMOS R (max) R (max) I (max) DSon DSon D @ @25 °C (mΩ) (mΩ) (A) 3 100 4.3 100 4.8 5 5.5 6 100 ...

Page 11

V N-channel Automotive TrenchMOS R (max) R (max) I (max) DSon DSon D @ @25 °C (mΩ) (mΩ) ( ...

Page 12

Selection Guides TrenchPLUS MOSFETs TrenchPLUS is a range of standard MOSFETs with additional protection features, such as current and temperature sensing components, overvoltage clamps, and gate protection (ESD) diodes. The system microcontroller can use data gathered from ...

Page 13

DSon DSon D V (max) (max) (max) DS (V) @ @25 °C (mΩ) (mΩ) (A) ✓ 55 9+23 10+25 17+9 ✓ 55 14+14 15+15 13+13 ✓ 55 14+14 15+15 13+13 ✓ 55 14+90 15+100 ...

Page 14

Application Guidelines Key application requirements 1 Mechanical robustness For high-vibration environments 2 Avalanche rugged Tolerating V overvoltage stress DS 3 Thermal robustness Using maximum die temperature of 175 °C 4 Low ON resistance Using MOSFETs with low R Typical ABS/ESP ...

Page 15

Application Guidelines Drives for brushless 3 phase motors showing a MOSFET for reverse polarity protection drive for brushed D.C. motor gate drive 2 D1 freewheel ...

Page 16

NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, ...

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