BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 7

• Manufacturer Part Number: BUK7107-55ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK7107-55ATE_2
Product data sheet
Symbol
L
L
Source-drain diode
V
t
Q
rr
D
S
SD
r
Characteristics
Parameter
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
…continued
Conditions
from upper edge of drain mounting base to
center of die
from source lead to source bond pad
I
see
I
V
S
S
DS
= 25 A; V
= 20 A; dI
Figure 17
= 30 V
Rev. 02 — 19 February 2009
GS
S
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
GS
= -10 V;
N-channel TrenchPLUS standard level FET
BUK7107-55ATE
Min
-
-
-
-
-
Typ
2.5
7.5
0.85
80
200
© NXP B.V. 2009. All rights reserved.
Max
-
-
1.2
-
-
Unit
nH
nH
V
ns
nC
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