BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 3

• Manufacturer Part Number: BUK7107-55ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7107-55ATE_2
Product data sheet
Symbol
V
V
I
I
P
I
V
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic Discharge
V
D
DM
GS(CL)
S
SM
stg
j
DS
GS
tot
isol(FET-TSD)
DGS
DS(AL)S
ESD
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
gate-source clamping
current
FET to temperature
sense diode isolation
voltage
storage temperature
junction temperature
drain-gate voltage
source current
peak source current
non-repetitive
drain-source avalanche
energy
electrostatic discharge
voltage
[1]
Current is limited by power dissipation chip rating.
Conditions
T
T
see
T
T
T
continuous
pulsed; t
I
T
t
I
T
HBM; C = 100 pF; R = 1.5 kΩ
DG
p
D
j
mb
mb
mb
mb
mb
j(init)
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 68 A; V
= 250 µA
Figure
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 25 °C; unclamped
p
Rev. 02 — 19 February 2009
= 5 ms; δ = 0.01
3;
sup
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed
GS
Figure 1
= 10 V; see
= 10 V;
mb
= 25 °C
GS
= 50 Ω; V
Figure
N-channel TrenchPLUS standard level FET
2;
GS
= 10 V;
BUK7107-55ATE
[1]
[1]
[1]
Min
-
-20
-
-
-
-
-
-
-
-100
-55
-55
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
55
20
75
140
75
560
272
10
50
100
175
175
55
140
75
560
460
6
Unit
V
V
A
A
A
A
W
mA
mA
V
°C
°C
V
A
A
A
mJ
kV
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