BUK7107-55ATE NXP Semiconductors, BUK7107-55ATE Datasheet - Page 10

• Manufacturer Part Number: BUK7107-55ATE
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7107-55ATE_2
Product data sheet
Fig 13. Transfer characteristics: drain current as a
Fig 15. Forward voltage of temperature sense diode as
(mV)
V
700
F
600
500
400
120
100
I D
(A)
80
60
40
20
0
function of gate-source voltage; typical values
a function of junction temperature; typical
values
0
0
50
2
100
175 °C
4
150
T j = 25 °C
V GS (V)
T
j
(°C)
03ni70
03ne84
Rev. 02 — 19 February 2009
200
6
Fig 14. Gate-source voltage as a function of turn-on
Fig 16. Temperature coefficient of temperature sense
(mV/K)
V GS
−1.70
−1.60
−1.50
−1.40
(V)
S
F
10
8
6
4
2
0
645
gate charge; typical values
diode as a function of forward voltage; typical
values
0
N-channel TrenchPLUS standard level FET
V DS = 14 V
655
40
BUK7107-55ATE
max
min
typ
80
665
V DS = 44 V
Q G (nC)
V
© NXP B.V. 2009. All rights reserved.
F
(mV)
03nf25
03ne85
120
675
10 of 15