BTH151S-650R NXP Semiconductors, BTH151S-650R Datasheet - Page 4

• Manufacturer Part Number: BTH151S-650R
• Description: Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cyclin
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
Thyristor
High Repetitive Surge
March 2001
10
Fig.2. Maximum on-state dissipation, P
15
Fig.3. Maximum permissible rms current I
Fig.4. Maximum permissible rms current I
15
10
5
0
5
0
1000
0
-50
Ptot / W
100
IT(RMS) / A
10
conduction
angle
degrees
10us
versus mounting base temperature T
versus mounting base temperature T
average on-state current, I
120
180
ITSM / A
30
60
90
I
1
T
Tj initial = 25 C max
dI /dt limit
form
factor
T
a = form factor = I
1.9
1.57
4
2.8
2.2
a
T
2
0
I TSM
time
100us
3
4
IF(AV) / A
Tmb / C
4
50
T / s
2.8
T(RMS)
5
1ms
2.2
T(AV)
/ I
T(AV)
100
6
, where
Tmb(max) / C
1.9
.
103 C
tot
a = 1.57
7
, versus
mb
mb
T(RMS)
T(RMS)
.
.
10ms
150
8
107
116
125
98
,
,
3
Fig.6. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.5. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
80
60
40
20
0
5
0
0.01
1
(T
-50
1
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.7. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
BTH151S-650R
mb
I
Product specification
T
Tj initial = 25 C max
100
1
≤ 103˚C.
T
100
I TSM
time
Rev 1.001
1000
150
10
j
.