BTH151S-650R NXP Semiconductors, BTH151S-650R Datasheet - Page 2

• Manufacturer Part Number: BTH151S-650R
• Description: Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cyclin
• Manufacturer: NXP Semiconductors

1;3 Semiconductors
Thyristor
High Repetitive Surge
GENERAL DESCRIPTION
Passivated thyristor in a plastic envelope,
suitable for surface mounting, intended for
use
bidirectional blocking voltage capability and
high thermal cycling performance. This
thyristor has a high repetitive surge
specification which makes it suitable for
applications where high inrush currents or
stall currents are likely to occur on a
repetitive basis.
PINNING - SOT428
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
March 2001
SYMBOL PARAMETER
V
V
I
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
TRM
2
GM
DRM
RRM
t
GM
RGM
GM
G(AV)
stg
j
PIN
T
tab
/dt
1
2
3
,
in
DESCRIPTION
cathode
anode
gate
anode
applications
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Repetitive peak on-state
current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
requiring
PIN CONFIGURATION
high
CONDITIONS
half sine wave;
T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10ms, τ = 3s, T
of surges = 100k
t = 10 ms
I
dI
over any 20 ms period
TM
mb
G
/dt = 50 mA/μs
= 20 A; I
≤ 103 ˚C
QUICK REFERENCE DATA
V
I
I
I
I
1
T(AV)
T(RMS)
TSM
TRM
SYMBOL
DRM
tab
2
, V
G
3
= 50 mA;
RRM
1
j
= 25 ˚C prior to
mb
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Repetitive peak on-state current
≤ 45˚C, no.
PARAMETER
SYMBOL
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
a
Product specification
MAX.
BTH151S-650R
1
110
121
150
125
650
7.5
0.5
12
60
61
50
2
5
5
5
g
MAX.
650
110
7.5
12
60
Rev 1.001
k
UNIT
UNIT
A/μs
A
W
W
˚C
˚C
V
A
A
A
A
A
A
V
V
V
A
A
A
A
2
s