BTH151S-650R,118 NXP Semiconductors, BTH151S-650R,118 Datasheet
BTH151S-650R,118
Specifications of BTH151S-650R,118
BTH151S-650R /T3
BTH151S-650R /T3
Related parts for BTH151S-650R,118
BTH151S-650R,118 Summary of contents
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... CONDITIONS half sine wave; T 103 ˚C mb all conduction angles half sine wave ˚C prior to j surge 8 10ms, = 3s, T 45˚C, no surges = 100k over any 20 ms period 1 Product specification BTH151S-650R MAX. UNIT 650 7.5 12 110 60 SYMBOL MIN. MAX. UNIT 1 - 650 - 7 110 - 121 - 60 ...
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... DRM(max / 67 125 ˚C; D DRM(max / / 100 D GK 10ms 3 s (Minimum) =60A (f=50Hz) at Tc=45˚C. Maximum number of cycles n=100k. Repetitive P cycle T=3 seconds minimum. 2 Product specification BTH151S-650R MIN. TYP. MAX 1 MIN. TYP. MAX 1.4 1.75 - 0.6 1.5 0.25 0 125 ˚C - 0.1 0.5 MIN ...
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... Fig.7. Normalised gate trigger voltage T(RMS Product specification BTH151S-650R I TSM I T time T Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... Fig.12. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.13. Typical, critical rate of rise of off-state voltage Product specification BTH151S-650R typ max 0 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 Ohms gate open circuit 50 100 /dt versus junction temperature T ...
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... Fig.14. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.15. SOT428 : minimum pad sizes for surface mounting. 5 Product specification BTH151S-650R seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.001 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 2001 6 Product specification BTH151S-650R Rev 1.001 ...