BT169B NXP Semiconductors, BT169B Datasheet - Page 6

• Manufacturer Part Number: BT169B
• Description: Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BT169_SER
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
t
t
GT
L
H
D
gt
q
j
T
GT
, I
= 25
D
R
/dt

C unless otherwise stated.
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage
current
critical rate of rise of
off-state voltage
gate controlled
turn-on time
circuit commuted
turn-off time
Conditions
V
gate open circuit; see
V
R
V
R
I
I
see
V
T
V
exponential waveform;
see
I
I
V
I
dI
R
T
T
TM
G
TM
j
D
D
D
D
DM
D
GK
GK
GK
TM
= 1.2 A
= 10 mA; gate open circuit;
V
V
= 125 C; R
R
gate open circuit
= 10 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
= 67 % V
= 2 A; V
= 1.6 A; V
D
D
GK
Figure 7
Figure 12
/dt = 30 A/s; dV
All information provided in this document is subject to legal disclaimers.
= 1 k; see
= 1 k; see
= 1 k
= 67 % V
= 12 V
= V
DRM(max)
= 1 k
DRM(max)
Rev. 5 — 30 September 2011
T
GT
GT
D
DRM(max)
= 10 mA;
= V
R
DRM(max)
GK
G
= 0.5 mA;
= 0.5 mA;
; V
/dt = 0.1 A/s
= 35 V;
Figure 10
Figure 11
DRM(max)
; T
= 1 k
R
= V
j
; T
= 125 C
D
Figure 8
; T
/dt = 2 V/s;
RRM(max)
j
= 125 C;
j
;
= 125 C;
;
Min
-
-
-
-
-
0.2
-
500
-
-
-
BT169 series
25
Typ
50
2
2
1.25
0.5
0.3
0.05
800
2
100
Thyristor logic level
© NXP B.V. 2011. All rights reserved.
Max
200
6
5
1.7
0.8
-
0.1
-
-
-
-
V
V/s
V/s
Unit
A
mA
mA
V
V
mA
s
s
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