BT169B NXP Semiconductors, BT169B Datasheet - Page 3

Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package

BT169B

Manufacturer Part Number
BT169B
Description
Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
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NXP Semiconductors
BT169_SER
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
values.
0
a = form factor = I
1
f = 50 Hz.
T(RMS)
0.1
/I
T(AV)
.
4
All information provided in this document is subject to legal disclaimers.
0.2
10
Rev. 5 — 30 September 2011
2.8
0.3
2.2
10
0.4
2
conduction
(degrees)
1.9
angle
120
180
30
60
90
number of cycles
factor
form
1.57
2.8
2.2
1.9
a
4
BT169 series
0.5
I
T
T
j(init)
a =
1.57
Thyristor logic level
t
I
p
T(AV)
= 25 C max
© NXP B.V. 2011. All rights reserved.
001aab446
001aab499
(A)
I
TSM
t
10
0.6
3
77
89
101
113
125
T
( C)
lead(max)
3 of 13

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