BT169B NXP Semiconductors, BT169B Datasheet - Page 2

• Manufacturer Part Number: BT169B
• Description: Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BT169_SER
Product data sheet
Type number
BT169B
BT169D
BT169G
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/s.
, V
RRM
Ordering information
Limiting values
Parameter
repetitive peak off-state voltages
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
BT169B
BT169D
BT169G
Package
Name
-
Description
plastic single-ended leaded (through hole) package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 30 September 2011
all conduction angles;
half sine wave;
Conditions
half sine wave;
T
see
see
T
surge;
see
t = 10 ms
I
dI
over any 20 ms period
TM
lead
j
G
t = 10 ms
t = 8.3 ms
= 25 C prior to
/dt = 100 mA/s
= 2 A; I
Figure 1
Figure 4
Figure 2
 83 C;
G
= 10 mA;
and
and
5
3
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
BT169 series
Max
200
400
600
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
+150
125
Thyristor logic level
© NXP B.V. 2011. All rights reserved.
Version
SOT54
Unit
V
V
V
A
A
A
A
A
A/s
A
V
V
W
W
C
C
2
s
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