BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 7

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance

BT151-1000RT

Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current as a function of on-state
V
GT(25 C)
V
(1) T
(2) T
(3) T
(A)
GT
I
T
1.6
1.2
0.8
0.4
30
20
10
0
junction temperature
V
R
voltage
50
0
j
j
j
o
s
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
= 1.06 V
= 0.0304
0.5
0
50
1
(1)
(2)
100
1.5
(3)
003aab823
T
001aaa959
V
j
T
( C)
(V)
12 A thyristor high blocking voltage high operating temperature
150
Rev. 01 — 6 August 2007
2
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT
I
L
3
2
1
0
3
2
1
0
junction temperature
junction temperature
50
50
0
0
BT151-1000RT
50
50
100
100
© NXP B.V. 2007. All rights reserved.
003aab824
T
003aab825
T
j
j
( C)
( C)
150
150
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