BT151-800C,127 NXP Semiconductors, BT151-800C,127 Datasheet

BT151-800C,127

Manufacturer Part Number

BT151-800C,127

Description

THYRISTOR 12A 800V TO-220AB

Manufacturer

NXP Semiconductors

Datasheet

1.BT151-500C127.pdf (6 pages)

Specifications of BT151-800C,127

Package / Case

TO-220AB-3

Scr Type

Standard Recovery

Voltage - Off State

800V

Voltage - Gate Trigger (vgt) (max)

1.5V

Voltage - On State (vtm) (max)

1.75V

Current - On State (it (av)) (max)

7.5A

Current - On State (it (rms)) (max)

12A

Current - Gate Trigger (igt) (max)

15mA

Current - Hold (ih) (max)

20mA

Current - Off State (max)

500µA

Current - Non Rep. Surge 50, 60hz (itsm)

100A, 110A

Operating Temperature

-40°C ~ 125°C

Mounting Type

Through Hole

Current - On State (it (rms) (max)

12A

Breakover Current Ibo Max

110 A

Rated Repetitive Off-state Voltage Vdrm

800 V

Off-state Leakage Current @ Vdrm Idrm

0.5 mA

Forward Voltage Drop

1.75 V

Gate Trigger Voltage (vgt)

1.5 V

Maximum Gate Peak Inverse Voltage

5 V

Gate Trigger Current (igt)

15 mA

Holding Current (ih Max)

20 mA

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

568-1777
934058482127
BT151-800C

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Philips Semiconductors

GENERAL DESCRIPTION

Passivated thyristors in a plastic

envelope, intended for use in

applications

bidirectional

capability and high thermal cycling

performance. Typical applications

include motor control, industrial

and domestic lighting, heating and

static switching.

PINNING - TO220AB

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 60134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/ s.

April 2004

Thyristors

SYMBO

T(AV)

T(RMS)

TSM

stg

DRM

RRM

RGM

G(AV)

tab

/dt

cathode

anode

gate

anode

PARAMETER

Repetitive peak

off-state voltages

Average on-state

current

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of I

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate

voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

t for fusing

blocking

DESCRIPTION

requiring

voltage

high

CONDITIONS

half sine wave; T

all conduction angles

half sine wave; T

prior to surge

t = 10 ms

t = 8.3 ms

t = 10 ms

over any 20 ms period

SYMBOL

RRM

T(AV)

T(RMS)

TSM

DRM

/dt = 50 mA/ s

QUICK REFERENCE DATA

PIN CONFIGURATION

= 20 A; I

PARAMETER

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

= 50 mA;

tab

= 25 ˚C

1 2 3

109 ˚C

BT151-

MIN.

-40

-500C

500

SYMBOL

MAX.

500C

500

100

7.5

-650C

MAX.

650

100

110

150

125

7.5

0.5

MAX.

650C

BT151 series C

650

100

7.5

Product specification

-800C

MAX.

800C

800

100

7.5

Rev 1.000

UNIT

A/ s

˚C

Related parts for BT151-800C,127

BT151-800C,127 Summary of contents

Page 1

... ˚C j prior to surge over any 20 ms period - - Product specification BT151 series C MAX. MAX. MAX. UNIT 500C 650C 800C 500 650 800 V 7.5 7.5 7 100 100 100 A SYMBOL MAX. UNIT -500C -650C -800C ...

... RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; Gate open circuit R = 100 0 DRM(max / 67 125 ˚C; D DRM(max / / 100 Product specification BT151 series C MIN. TYP. MAX. UNIT - - 1.3 K K/W MIN. TYP. MAX. UNIT - 1.44 1. 0.6 1.5 V 0.25 0 0.1 0.5 mA MIN. TYP. MAX. UNIT ...

Page 3

... Fig.6. Normalised gate trigger voltage T(RMS Product specification BT151 series C I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 10000 1000 100 10 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT151 series C typ max 0 0.1ms 1ms 10ms 0. versus th j-mb pulse width RGK = 100 Ohms gate open circuit 50 100 /dt versus junction temperature T ...

Page 5

... Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2004 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT151 series C 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.000 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT151 series C Rev 1.000 ...

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BT151-800C,127 NXP Semiconductors, BT151-800C,127 Datasheet

BT151-800C,127

Specifications of BT151-800C,127

Related parts for BT151-800C,127

BT151-800C,127 Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Related keywords