BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 3

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance

BT151-1000RT

Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/ I
T(AV)
2
10
12 A thyristor high blocking voltage high operating temperature
4
Rev. 01 — 6 August 2007
4
2.8
10
2
conduction
2.2
(degrees)
angle
120
180
30
60
90
6
BT151-1000RT
n (number of cycles)
factor
form
1.57
1.9
2.8
2.2
1.9
a
4
T
I
T
j
initial = 25 C max
I
T(AV)
t
p
© NXP B.V. 2007. All rights reserved.
(A)
003aab830
003aab829
a = 1.57
I
TSM
t
10
8
3
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