BT151-1000RT NXP Semiconductors, BT151-1000RT Datasheet - Page 3
![Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance](/photos/41/50/415038/sot078_3d_sml.gif)
BT151-1000RT
Manufacturer Part Number
BT151-1000RT
Description
Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring very high bidirectional blocking voltage capability, high junction temperature capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet
1.BT151-1000RT.pdf
(12 pages)
NXP Semiconductors
BT151-1000RT_1
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
160
120
15
10
80
40
5
0
0
Form factor a = I
f = 50 Hz
values
0
1
T(RMS)
/ I
T(AV)
2
10
12 A thyristor high blocking voltage high operating temperature
4
Rev. 01 — 6 August 2007
4
2.8
10
2
conduction
2.2
(degrees)
angle
120
180
30
60
90
6
BT151-1000RT
n (number of cycles)
factor
form
1.57
1.9
2.8
2.2
1.9
a
4
T
I
T
j
initial = 25 C max
I
T(AV)
t
p
© NXP B.V. 2007. All rights reserved.
(A)
003aab830
003aab829
a = 1.57
I
TSM
t
10
8
3
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