BT151-1000RT,127 NXP Semiconductors, BT151-1000RT,127 Datasheet
BT151-1000RT,127
Specifications of BT151-1000RT,127
BT151-1000RT
BT151-1000RT
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BT151-1000RT,127 Summary of contents
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... BT151-1000RT 12 A thyristor high blocking voltage high operating temperature Rev. 01 — 6 August 2007 1. Product profile 1.1 General description Passivated thyristor in a SOT78 plastic package. 1.2 Features I High thermal cycling performance 150 C capable j 1.3 Applications I Motor control I Ignition circuits 1.4 Quick reference data ...
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... Conditions half sine wave; T 134 C; mb see Figure 1 all conduction angles; see and 5 half sine wave prior to j surge; see Figure 2 and over any 20 ms period Rev. 01 — 6 August 2007 BT151-1000RT Min Max - 1000 - 1000 - 7.5 Figure 120 - 131 - 0.5 40 ...
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... Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT151-1000RT_1 Product data sheet 12 A thyristor high blocking voltage high operating temperature 2 Rev. 01 — 6 August 2007 BT151-1000RT 003aab830 a = 1.57 1.9 2.2 conduction form angle factor (degrees 2 ...
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... Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents BT151-1000RT_1 Product data sheet 12 A thyristor high blocking voltage high operating temperature 4 10 001aaa954 16 I T(RMS) ( surge duration (s) Fig 5. RMS on-state current as a function of mounting Rev. 01 — 6 August 2007 BT151-1000RT initial = 25 C max ( ...
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... Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT151-1000RT_1 Product data sheet 12 A thyristor high blocking voltage high operating temperature Conditions see Figure 6 in free air Rev. 01 — 6 August 2007 BT151-1000RT Min Typ Max - - 1 001aaa962 (s) p © NXP B.V. 2007. All rights reserved. ...
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... RRM(max 0. 150 C; DM DRM(max) j exponential waveform; gate open circuit; see Figure DRM(max 100 mA 150 C; DM DRM(max (dI /dt / 100 GK Rev. 01 — 6 August 2007 BT151-1000RT Min Typ Max Unit 1.4 1. 0.6 1.5 V 0.25 0 0.5 2 0.5 2 300 - © NXP B.V. 2007. All rights reserved. ...
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... Fig 8. Normalized gate trigger current as a function of junction temperature 001aaa959 L( ( (V) T Fig 10. Normalized latching current as a function of junction temperature Rev. 01 — 6 August 2007 BT151-1000RT 003aab824 100 T 003aab825 100 T © NXP B.V. 2007. All rights reserved. 150 ( C) j 150 ( ...
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... A thyristor high blocking voltage high operating temperature 003aab826 / 100 150 Gate open circuit Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values Rev. 01 — 6 August 2007 BT151-1000RT 003aab827 50 100 150 © NXP B.V. 2007. All rights reserved ...
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... 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 01 — 6 August 2007 BT151-1000RT mounting base max. 15.0 3.30 3.8 3.0 3.0 12.8 2.79 3.5 2.7 EUROPEAN PROJECTION SOT78 Q 2.6 2.2 ISSUE DATE 05-03-22 05-10-25 © ...
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... Table 6. Revision history Document ID Release date BT151-1000RT_1 20070806 BT151-1000RT_1 Product data sheet 12 A thyristor high blocking voltage high operating temperature Data sheet status Product data sheet Rev. 01 — 6 August 2007 BT151-1000RT Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 6 August 2007 BT151-1000RT Trademarks © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BT151-1000RT All rights reserved. Date of release: 6 August 2007 Document identifier: BT151-1000RT_1 ...