SAM9M10 Atmel Corporation, SAM9M10 Datasheet - Page 93

• Manufacturer Part Number: SAM9M10
• Manufacturer: Atmel Corporation

Specifications of SAM9M10

• Flash (kbytes): 0 Kbytes
• Pin Count: 324
• Max. Operating Frequency: 400 MHz
• Cpu: ARM926
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 160
• Ext Interrupts: 160
• Usb Transceiver: 3
• Usb Speed: Hi-Speed
• Usb Interface: Host, Device
• Spi: 2
• Twi (i2c): 2
• Uart: 5
• Lin: 4
• Ssc: 2
• Ethernet: 1
• Sd / Emmc: 2
• Graphic Lcd: Yes
• Video Decoder: Yes
• Camera Interface: Yes
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 440
• Resistive Touch Screen: Yes
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 64
• Self Program Memory: NO
• External Bus Interface: 2
• Dram Memory: DDR2/LPDDR, SDRAM/LPSDR
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8/3.3
• Operating Voltage (vcc): 0.9 to 1.1
• Fpu: No
• Mpu / Mmu: No / Yes
• Timers: 6
• Output Compare Channels: 6
• Input Capture Channels: 6
• Pwm Channels: 4
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: No

ARM DDI 0029G
ARM7TDMI test chip or product
ARM7TDMI core
At the core level, TBE and DBE are inactive, tied HIGH, because in a packaged part
you do not have to manually force the internal buses into a high impedance state. At the
pad level, the test chip signal EDBE is used by the bus control logic to allow the external
memory controller to arbitrate the bus and asynchronously disable the ARM7TDMI
core test chip if necessary.
scan
scan
scan
cell
cell
cell
Note
Copyright © 1994-2001. All rights reserved.
MCLK
DBE
nENOUT
nENIN
TBE
D[31:0]
Vdd
Vdd
Vss
nEDBE
Figure 3-17 Test chip data bus circuit
nEN1
nEN2
Pad
Memory Interface
MCLK
EDBE
XD[31:0]
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