ATmega324P Automotive Atmel Corporation, ATmega324P Automotive Datasheet - Page 326

• Manufacturer Part Number: ATmega324P Automotive
• Manufacturer: Atmel Corporation

Specifications of ATmega324P Automotive

• Flash (kbytes): 32 Kbytes
• Pin Count: 44
• Max. Operating Frequency: 16 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 32
• Ext Interrupts: 32
• Usb Speed: No
• Usb Interface: No
• Spi: 3
• Twi (i2c): 1
• Uart: 2
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 2
• Eeprom (bytes): 1024
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 125
• I/o Supply Class: 2.7 to 5.5
• Operating Voltage (vcc): 2.7 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 3
• Output Compare Channels: 6
• Input Capture Channels: 1
• Pwm Channels: 6
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

25.10.17 Reading the Flash
25.10.18 Programming the EEPROM
25.10.19 Reading the EEPROM
326
ATmega164P/324P/644P
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Flash read using programming instruction 3a.
3. Load address using programming instructions 3b, 3c and 3d.
4. Read data using programming instruction 3e.
5. Repeat steps 3 and 4 until all data have been read.
A more efficient data transfer can be achieved using the PROG_PAGEREAD instruction:
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable Flash read using programming instruction 3a.
3. Load the page address using programming instructions 3b, 3c and 3d. PCWORD (refer
4. Enter JTAG instruction PROG_PAGEREAD.
5. Read the entire page (or Flash) by shifting out all instruction words in the page (or Flash),
6. Enter JTAG instruction PROG_COMMANDS.
7. Repeat steps 3 to 6 until all data have been read.
Before programming the EEPROM a Chip Erase must be performed, see “Performing Chip
Erase” on page 325.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM write using programming instruction 4a.
3. Load address High byte using programming instruction 4b.
4. Load address Low byte using programming instruction 4c.
5. Load data using programming instructions 4d and 4e.
6. Repeat steps 4 and 5 for all data bytes in the page.
7. Write the data using programming instruction 4f.
8. Poll for EEPROM write complete using programming instruction 4g, or wait for t
9. Repeat steps 3 to 8 until all data have been programmed.
Note that the PROG_PAGELOAD instruction can not be used when programming the EEPROM.
1. Enter JTAG instruction PROG_COMMANDS.
2. Enable EEPROM read using programming instruction 5a.
3. Load address using programming instructions 5b and 5c.
4. Read data using programming instruction 5d.
5. Repeat steps 3 and 4 until all data have been read.
Note that the PROG_PAGEREAD instruction can not be used when reading the EEPROM.
to
starting with the LSB of the first instruction in the page (Flash) and ending with the MSB
of the last instruction in the page (Flash). The Capture-DR state both captures the data
from the Flash, and also auto-increments the program counter after each word is read.
Note that Capture-DR comes before the shift-DR state. Hence, the first byte which is
shifted out contains valid data.
(refer to
Table 25-7 on page
Table 25-14 on page
299) is used to address within one page and must be written as 0.
309).
7674F–AVR–09/09
WLRH