BGA771N16 Infineon Technologies, BGA771N16 Datasheet - Page 6

• Manufacturer Part Number: BGA771N16
• Manufacturer: Infineon Technologies

Specifications of BGA771N16

• Packages: TSNP-16-1
• Frequency Hz: 900 / 1900 MHz
• Gain (typ): 16.0 dB
• F (typ): 1.1 dB
• P-1db (in): -5
• I (typ): 3.4 mA
• Lead Free Status / Rohs Status: Supplier Unconfirmed

2
2.1
Table 1
Parameter
Supply voltage
Supply current
Pin voltage
Pin voltage RF Input Pins
RF input power
Junction temperature
Ambient temperature range
Storage temperature range
2.2
Table 2
Parameter
Thermal resistance junction
to soldering point
2.3
Table 3
Parameter
ESD hardness HBM
1) According to JESD22-A114
Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
Thermal Resistance
Thermal Resistance
ESD Integrity
ESD Integrity
1)
Symbol
V
I
V
V
P
T
T
T
Symbol
R
Symbol
V
CC
j
A
stg
CC
PIN
RFIN
RFIN
thJS
ESD-HBM
Values
Min.
-0.3
-0.3
-0.3
-30
-65
Value
Value (typ.)
2000
37
BGA771N16 - Low Power Dual-Band UMTS LNA
6
Max.
3.6
10
V
0.9
4
150
85
150
CC
+0.3
Unit
V
mA
V
V
dBm
°C
°C
°C
Unit
K/W
Unit
V
Absolute Maximum Ratings
Note / Test Conditions
Note / Test Conditions
All pins
Note / Test Condition
All pins except RF input pins
Electrical Characteristics
V3.1, 2010-03-16