BGA 622L7 E6327 Infineon Technologies, BGA 622L7 E6327 Datasheet
BGA 622L7 E6327
Specifications of BGA 622L7 E6327
BGA622L7E6327INTR
BGA622L7E6327XT
SP000017535
Related parts for BGA 622L7 E6327
BGA 622L7 E6327 Summary of contents
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...
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... BGA622L7, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2006-05-19 Page Subjects (major changes since last revision) All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA622L7 Rev. 2.2, 2008-04-14 ...
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... Pin connection Description The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level open switches the device on and a DC ...
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Maximum Ratings Table 1 Maximum ratings Parameter V Voltage at pin CC Voltage at pin Out Current into pin In Current into pin Out V Current into pin CC RF input power T Total power dissipation, < 142 °C ...
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Electrical Characteristics 3.1 Electrical Characteristics 2.75 V, Frequency = 1.575 GHz, unless otherwise specified CC Table 3 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z ...
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Electrical Characteristics 2.75 V, Frequency = 2.14 GHz, unless otherwise specified CC Table 4 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z Noise figure ( ...
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Measured Parameters 2 Power Gain | f( 2.75V 5.8mA CC tot− Frequency [GHz] ...
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Stability f( 2.75V 5.8mA CC tot−on 5 4 2 Frequency [GHz] Device Current I = f(T tot−on V ...
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Package Information Top view Pin 1 marking 1) Dimension applies to plated terminal Figure 3 Package Outline TSLP-7-1 Figure 4 Tape for TSLP-7-1 Data Sheet Bottom view +0.1 0.4 1.3 0.05 MAX 1 ...