BGA 622 E6820 Infineon Technologies, BGA 622 E6820 Datasheet

IC OPAMP WIDEBAND LN SOT-343

BGA 622 E6820

Manufacturer Part Number
BGA 622 E6820
Description
IC OPAMP WIDEBAND LN SOT-343
Manufacturer
Infineon Technologies
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA 622 E6820

Noise Figure
1dB
Current - Supply
10mA
Frequency
500MHz ~ 6GHz
Gain
15dB
P1db
-16.5dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Rf Type
Cellular, GSM, DCS, PCS, UMTS, ISM, WLAN, WLL
Test Frequency
1.575GHz
Voltage - Supply
3.5V
Operating Frequency
6000 MHz
Supply Current
8.8 mA
Maximum Power Dissipation
35 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA622E6820INTR
BGA622E6820XT
SP000202585
D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8
B G A 6 22
S i l i c o n G e r m a n i u m W i d e B a n d L o w N o i s e
A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n
S m a l l S i g n a l D i s c r et e s

Related parts for BGA 622 E6820

BGA 622 E6820 Summary of contents

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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... BGA622, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Revision History: 2008-04-14, Rev. 2.2 Previous Version: 2005-11-16 Page Subjects (major changes since last revision) All Document layout change Trademarks ® SIEGET is a registered trademark of Infineon Technologies AG. Data Sheet 3 BGA622 Rev. 2.2, 2008-04-14 ...

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... Pin connection Description The BGA622 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HF. In order to provide the LNA in a small package the out-pin is simultaneously used for RF out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level open ...

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Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection Maximum Ratings Table 1 Maximum ratings Parameter V Voltage at pin CC Voltage at pin Out Current into pin In Current into pin Out V Current into pin ...

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Electrical Characteristics 2.1 Electrical characteristics 2.75 V, Frequency = 1.575 GHz, unless otherwise specified CC Table 3 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z ...

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Electrical characteristics 2.75 V, Frequency = 2.14 GHz, unless otherwise specified CC Table 4 Electrical Characteristics Parameter Insertion power gain Insertion power gain (Off-State) Input return loss (On-State) Output return loss (On-State) Z Noise figure ( ...

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Figure 3 Application Circuit for 1800 - 2500 MHz Data Sheet DC, Out 2.75V 47pF (DC-Block) RFC 150pF On/Off Switch DC, 2.75V 2.2nH (for improved input match) 47pF (DC-Block) In BGA622_Application_Circuit.vsd 8 BGA622 Electrical Characteristics Rev. 2.2, 2008-04-14 ...

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Measured Parameters 2 Power Gain | f( 2.75V 5.8mA CC tot− Frequency [GHz] ...

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Stability f( 2.75V 5.8mA CC tot− 3.5 3 2 Frequency [GHz] Input Compression Point 2.14GHz, ...

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Device Current I = f(V tot− parameter in °C A 8.5 8 7.5 7 6.5 6 5.5 5 2 Power Gain | f 2.14GHz ...

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Package Information 4 1 +0.1 0.3 Figure 4 Package Outline SOT343 Figure 5 Tape for SOT343 Data Sheet 2 ±0.2 B 1.3 ±0.1 0. +0.2 acc. to DIN 6784 2 +0.1 0.6 4 Pin 1 2.15 ...

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