BGA771N16 Infineon Technologies, BGA771N16 Datasheet
BGA771N16
Specifications of BGA771N16
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BGA771N16 Summary of contents
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High Linearity Dual-Band UMTS LNA (1900/1800/2100, 800/900MHz Revision 3.1, 2010-03-16 Final R F & ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...
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... BGA771N16 Revision History: 2010-03-16, V3.1 Previous Version: 2008-08-26, V3.0 Page Subjects (major changes since last revision) all Updated package Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA 3 V3.1, 2010-03-16 ...
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... UMTS bands III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 3.3 UMTS bands IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.4 Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.5 Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.1 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.2 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA ° ° V3.1, 2010-03-16 ...
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... Description The BGA771N16 is a highly flexible, high linearity dual-band (1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on- chip as well as matching off chip ...
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... Parameter Symbol R Thermal resistance junction thJS to soldering point 2.3 ESD Integrity Table 3 ESD Integrity Parameter Symbol 1) V ESD hardness HBM ESD-HBM 1) According to JESD22-A114 Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Values Min. Max. -0.3 3 -0.3 +0.3 CC -0.3 0.9 4 150 -30 85 -65 ...
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... Band Select / Gain Control Truth Table Table 5 Band Select Truth Table, Mid band VEN1 H VEN2 L Table 6 Gain Control Truth Table, VGS Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C A Values Min. Typ. Max. 2.7 2.8 3.0 3.4 650 0 ...
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... Supply current high / mid gain mode versus reference resistor R resistor; low gain mode supply current is independent of reference resistor). I Supply Current Midband = 2 REF Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C A REF R ) Supply Current Lowband REF 100 8 Electrical Characteristics Supply current characteristics; T ...
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... EN1 2 0.5 1 1.5 V [V] EN1,2 2.8 Switching Times Table 7 Typical switching times; Parameter Settling time gainstep Settling time bandselect Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C A Logic currents -30 ... 85 °C A Symbol Values Min. Typ Electrical Characteristics Logic Signal Characteristics; T ...
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... Stability factor 1) Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C, A Symbol Values Min. Typ. 869 875 I 3.4 CCHG I 0.65 CCLG S 16.1 ...
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... Stability factor 1) Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C, A Symbol Values Min. Typ. 925 I 3.4 CCHG I 0.65 CCLG S 16.1 21HG S -7 ...
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... Stability factor 1) Input compression point 1) Inband IIP3 - MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C, A Symbol Values Min. Typ. 1930 I 3.4 CCHG I 0.65 CCLG S 16.0 21HG S -7 ...
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... Stability factor 1) Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C, A Symbol Values Min. Typ. 1805 1844.9 I 3.4 CCHG I 0.65 CCLG S 16.2 ...
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... Stability factor 1) Input compression point 1) Inband IIP3 MHz -37 dBm Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA °C, A Symbol Values Min. Typ. 2110 I 3.4 CCHG I 0.65 CCLG S 15.8 21HG S -7 ...
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... Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Low Band (Band V) High Gain Mode vs. Frequency 2.8 V EN1 EN2 Power Gain wideband −30°C 25°C 85°C 0.89 0.9 ...
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... Measured Performance Low Band (Band V) High Gain Mode vs. Temperature 2 2 EN1 |S T Power Gain | = −40 − [°C] A Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Input Compression −10 −12 −14 0. 880 MHz EN2 Supply Current 100 16 Electrical Characteristics P1dB −2 −4 −6 −8 0.86 0.87 0.88 0.89 ...
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... Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Input Compression −10 −12 − 100 2.8 V EN1 EN2 Power Gain wideband − ...
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... Frequency [GHz Noise Figure = 0.86 0.87 0.88 Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency 0.89 0.9 Input Compression −10 −12 −14 0.89 0.9 18 Electrical Characteristics P1dB ...
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... T [° Noise Figure = −40 − [°C] A Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA 2 880 MHz EN2 Supply Current 100 Input Compression −10 −12 − 100 19 Electrical Characteristics 0.8 0.75 0.7 0.65 0.6 0.55 0.5 − ...
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... Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency 2 EN1 EN2 Power Gain wideband −30°C 25°C 85°C 1.97 1.98 1 ...
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... Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature EN1 |S T Power Gain | = −40 − [°C] A Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Input Compression −10 −12 −14 1.97 1.98 1. 1960 MHz EN2 Supply Current 100 21 Electrical Characteristics P1dB −2 −4 −6 −8 1.93 1.94 1.95 1 ...
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... Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Input Compression −2 −4 −6 −8 −10 −12 − 100 ...
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... Frequency [GHz Noise Figure = 1.93 1.94 1.95 1.96 Frequency [GHz] Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency 1.97 1.98 1.99 Input Compression −10 −12 −14 1.97 1.98 1.99 23 Electrical Characteristics ...
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... T [° Noise Figure = −40 − [°C] A Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA 1960 MHz EN2 Supply Current 100 Input Compression −10 −12 − 100 24 Electrical Characteristics 0.8 0.75 0.7 0.65 0.6 0.55 0.5 − ...
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... Note: Package paddle (Pin 0) has grounded. Table 13 Parts List Part Number Part Type L1 ... L2 Chip inductor C1 ... C5 Chip capacitor RREF Chip resistor Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA UMTS bands II and V Application Circuit Schematic 10nF 0 GND 5 n/c 4 n/c ...
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... Note: Package paddle (Pin 0) has grounded. Table 14 Parts List Part Number Part Type L1 ... L4 Chip inductor C1 ... C6 Chip capacitor RREF Chip resistor Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA UMTS bands III and VIII Application Circuit Schematic 10nF 0 GND 5 n/c 4 ...
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... Note: Package paddle (Pin 0) has grounded. Table 15 Parts List Part Number Part Type L1 ... L4 Chip inductor C1 ... C5 Chip capacitor RREF Chip resistor Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA UMTS bands IV and VIII Application Circuit Schematic 10nF 0 GND 5 n/c ...
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... VEN1 13 RREF 14 RFOUTL 15 n/c 16 RFOUTM Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Function Package paddle; ground connection for low band LNA and control circuity Not connected Gain step control Supply voltage Not connected Not connected ...
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... Figure 5 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm metallization, gold plated. Board size Figure 6 Cross-section view of application board Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram 29 Application Board V3.1, 2010-03-16 ...
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... Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram 30 Application Board ...
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... Physical Characteristics 4.1 Package Footprint Figure 8 Recommended footprint and stencil layout for the TSNP-16-1 package Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA 31 Physical Characteristics Package Footprint V3.1, 2010-03-16 ...
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... Package Dimensions Figure 9 Package outline (top, side and bottom view) Data Sheet BGA771N16 - Low Power Dual-Band UMTS LNA 32 Physical Characteristics Package Dimensions V3.1, 2010-03-16 ...
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... Published by Infineon Technologies AG ...