AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet - Page 8

• Manufacturer Part Number: AON7900
• Description: MOSFET 2N-CH 30V 24A/40A DFN
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: -r

Specifications of AON7900

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A, 40A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 15V
• Power - Max: 17W, 50W
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 785-1249-2

Rev 0: Sep 2010
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
10
10.0
8
6
4
2
0
1.0
0.1
0.0
0.01
0.1
0
10
0.00001
0.01
1
V
I
D
DS
=13A
=15V
R
limited
Figure 7: Gate-Charge Characteristics
Figure 9: Maximum Forward Biased Safe
DS(ON)
5
0.1
D=T
T
R
J,PK
Operating Area (Note F)
θJC
10
Single Pulse
=2.5°C/W
on
=T
T
T
0.0001
/T
J(Max)
C
=25°C
C
Q
V
+P
g
DS
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
=150°C
(nC)
DM
15
(Volts)
1
.Z
θJC
DC
.R
θJC
20
10
0.001
25
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
www.aosmd.com
10µs
1ms
100µs
100
30
Pulse Width (s)
0.01
3000
2500
2000
1500
1000
500
200
160
120
80
40
0
0.0001
0
40
0
Figure 10: Single Pulse Power Rating Junction-to-
Figure 8: Capacitance Characteristics
5
0.001
C
rss
0.1
P
D
10
T
on
0.01
Pulse Width (s)
V
Case (Note F)
DS
T
(Volts)
15
C
C
iss
oss
0.1
1
T
T
20
J(Max)
C
=25°C
=150°C
AON7900
1
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25
10
10
30