AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet - Page 5
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AON7900
Manufacturer Part Number
AON7900
Description
MOSFET 2N-CH 30V 24A/40A DFN
Manufacturer
Alpha & Omega Semiconductor Inc
Series
-r
Datasheet
1.AON7900.pdf
(10 pages)
Specifications of AON7900
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
24A, 40A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 15V
Power - Max
17W, 50W
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
785-1249-2
Rev 0: Sep 2010
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
0.000001
10
30
25
20
15
10
5
0
0.001
0.01
0
Figure 12: Single Pulse Avalanche capability (Note
0.1
10
0.00001
1
T
A
T
Figure 14: Current De-rating (Note F)
=150°C
A
25
=25°C
0.00001
Time in avalanche, t
D=T
T
R
J,PK
θJA
50
0.0001
=72°C/W
on
=T
/T
T
A
CASE
+P
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
T
75
DM
C)
A
(°C)
=100°C
.Z
θJA
0.001
0.0001
.R
100
Single Pulse
θJA
A
(s)
T
A
=125°C
125
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
www.aosmd.com
0.01
0.001
150
Pulse Width (s)
10000
0.1
1000
20
15
10
100
5
0
10
0.00001
1
0
40
Figure 15: Single Pulse Power Rating Junction-to-
25
Figure 13: Power De-rating (Note F)
1
0.001
P
D
50
T
on
T
Ambient (Note H)
CASE
T
0.1
Pulse Width (s)
10
75
(°C)
100
10
T
A
100
=25°C
17
10
18
125
Page 5 of 10
5
2
0
AON7900
1000
1000
150