AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet - Page 7

• Manufacturer Part Number: AON7900
• Description: MOSFET 2N-CH 30V 24A/40A DFN
• Manufacturer: Alpha & Omega Semiconductor Inc
• Series: -r

Specifications of AON7900

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 24A, 40A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 15V
• Power - Max: 17W, 50W
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 785-1249-2

Rev 0: Sep 2010
Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
10
14
12
10
0
8
6
4
2
8
6
4
2
0
0
2
10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
1
5
4
Gate Voltage (Note E)
4.5V
V
2
V
DS
V
GS
V
GS
(Volts)
(Note E)
=4.5V
GS
I
10
=10V
D
6
(A)
(Volts)
3
V
125°C
GS
25°C
3.5V
=2.5V
I
15
D
8
=13A
4
www.aosmd.com
10
20
5
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.8
1.6
1.4
1.2
0.8
30
25
20
15
10
1
5
0
Figure 4: On-Resistance vs. Junction Temperature
0
0
40
0.0
Figure 2: Transfer Characteristics (Note E)
V
Figure 6: Body-Diode Characteristics (Note E)
25
DS
=5V
50
0.2
1
125°C
Temperature (°C)
75
V
I
D
V
GS
=13A
(Note E)
GS
0.4
125°C
=10V
V
(Volts)
100
SD
2
(Volts)
125
0.6
V
I
D
GS
=10A
=4.5V
150
25°C
3
25°C
0.8
17
10
18
AON7900
Page 7 of 10
5
2
0
175
200
1.0
4