AON7900 Alpha & Omega Semiconductor Inc, AON7900 Datasheet

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AON7900

Manufacturer Part Number
AON7900
Description
MOSFET 2N-CH 30V 24A/40A DFN
Manufacturer
Alpha & Omega Semiconductor Inc
Series
-r
Datasheet

Specifications of AON7900

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
24A, 40A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 15V
Power - Max
17W, 50W
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
785-1249-2
Rev 0: Sep 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
Avalanche Energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
General Description
The AON7900 is designed to provide a high efficiency
synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized
MOSFETs in a dual Power DFN3.3x3.3 package. The Q1
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET is designed for low
R
well suited for use in compact DC/DC converter
applications.
DS(ON)
Top View
G
to reduce conduction losses. The AON7900 is
B
A
DFN3.3X3.3A
C
PIN1
PIN1
C
T
T
T
T
T
T
T
T
PIN1
C
C
A
A
C
C
A
A
=25°C
=100°C
=25°C
=70°C
=25°C
=100°C
=25°C
=70°C
C
Bottom View
A
A D
A
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
I
E
P
P
T
Symbol
D
DM
DSM
AS
www.aosmd.com
J
DS
GS
AS
D
DSM
, T
, I
R
R
, E
AR
STG
θJA
θJC
AR
30V Dual Asymmetric N-Channel MOSFET
Top View
Typ Q1
Product Summary
V
I
R
R
100% UIS Tested
100% Rg Tested
D
DS
DS(ON)
DS(ON)
27
60
6
(at V
Max Q1
1.8
1.1
24
15
90
22
24
17
8
6
7
(at V
(at V
GS
Typ Q2 Max Q1 Max Q2
=10V)
27
60
GS
GS
2
-55 to 150
=10V)
= 4.5V)
±20
30
G2
S2
S2
S2
7.5
35
72
Max Q2
8
7
6
5
Bottom View
150
1.8
1.1
40
31
13
10
28
39
50
20
Q1
30V
24A
<21mΩ
<28mΩ
D2/S1
2.5
35
72
AON7900
Q2
30V
40A
<6.7mΩ
<8.5mΩ
1
2
3
4
Units
Units
°C/W
°C/W
°C/W
Page 1 of 10
mJ
G1
D1
D1
D1
°C
W
W
V
V
A
A
A

Related parts for AON7900

AON7900 Summary of contents

Page 1

... General Description The AON7900 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3.3x3.3 package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low R to reduce conduction losses ...

Page 2

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AON7900 Min Typ Max =55°C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =8A D 1.0E+01 40 1.0E+00 1.0E-01 1.0E-02 125°C 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AON7900 =5V 125°C 25°C 1 1.5 2 2.5 3 3.5 V (Volts =10V =4. = 100 ...

Page 4

... 100 0.0001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJC 0.001 0.01 Pulse Width (s) www.aosmd.com AON7900 C iss C oss C rss (Volts) DS Figure 8: Capacitance Characteristics T =150°C J(Max) T =25°C C 0.001 0.01 0.1 1 ...

Page 5

... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJA 40 Single Pulse 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AON7900 100 125 T (°C) CASE Figure 13: Power De-rating (Note F) T =25° 0.001 ...

Page 6

... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AON7900 Min Typ Max =55°C ...

Page 7

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =13A D 1.0E+01 40 1.0E+00 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AON7900 =5V 125°C 25° (Volts =10V GS I =13A =4. =10A 100 125 150 ...

Page 8

... Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse θJC 40 0.001 0.01 Pulse Width (s) www.aosmd.com AON7900 C iss C C oss rss (Volts) DS Figure 8: Capacitance Characteristics T =150°C J(Max) T =25° ...

Page 9

... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse .R θJA 40 0.01 0.1 1 Pulse Width (s) www.aosmd.com AON7900 100 125 T (°C) CASE Figure 13: Power De-rating (Note F) T =25° 0.001 0.1 ...

Page 10

... VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AON7900 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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