ECH8659-TL-H ON Semiconductor, ECH8659-TL-H Datasheet - Page 3

• Manufacturer Part Number: ECH8659-TL-H
• Description: MOSFET N-CH DUAL 30V 7A ECH8
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of ECH8659-TL-H

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: -
• Gate Charge (qg) @ Vgs: 11.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SMD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

100
1.0
0.1
10
10
80
70
60
50
40
30
20
10
0.01
7
6
5
4
3
2
1
0
0
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
0.1
0
0
2
I D =2A
2
2
3
0.2
Drain-to-Source Voltage, V DS -- V
3
Gate-to-Source Voltage, V GS -- V
5 7
3.5A
4
t d (on)
5
0.1
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
7
6
⏐
I D -- V DS
0.4
1.0
2
y
fs⏐ -- I D
3
8
5 7
2
0.6
1.0
3
10
5
2
12
7
3
0.8
10
V DS =10V
V DD =15V
V GS = 10 V
5 7
Ta=25 ° C
14
IT13723
IT13725
IT13727
IT13729
10
2
ECH8659
1.0
16
2
3
1000
0.01
100
1.0
0.1
10
14
13
12
10
70
60
50
40
30
20
10
11
9
8
7
6
5
4
3
2
1
0
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
--60
0.3
0
0
--40
0.5
0.4
--20
5
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- °C
0
0.5
1.5
10
R DS (on) -- Ta
20
I D -- V GS
I S -- V SD
2.0
0.6
40
Ciss
2.5
15
60
0.7
3.0
80
20
3.5
0.8
100
No. A1224-3/4
4.0
120
V DS =10V
25
V GS =0V
0.9
f=1MHz
4.5
140
IT13724
IT13726
IT13728
IT13730
160
5.0
1.0
30