ECH8659-M-TL-H ON Semiconductor, ECH8659-M-TL-H Datasheet

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ECH8659-M-TL-H

Manufacturer Part Number
ECH8659-M-TL-H
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet
Ordering number : ENA1224A
ECH8659
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-001
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
4V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Protection diode in
1
Parameter
8
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
ECH8659-TL-H
Symbol
0 t o 0.02
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
ECH8659
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
8
1
7
2
TL
52312 TKIM/61808PA TIIM TC-00001318
6
3
2
×0.8mm) 1unit
5
4
2
×0.8mm)
DATA SHEET
: ECH8
: -
Marking
Ratings
--55 to +150
TE
Lot No.
±20
150
1.3
1.5
30
40
No. A1224-1/7
7
Unit
°C
°C
W
W
A
A
V
V

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ECH8659-M-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel ECH8659-TL-H Packing Type : 0.02 TL Electrical Connection http://semicon.sanyo.com/en/network ...

Page 2

... I D =3. =4.3Ω D PW=10μs D.C.≤1% G ECH8659 P.G 50Ω S Ordering Information Device ECH8659-TL-H ECH8659 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V =3. (on =3.5A =10V R DS (on =2A ...

Page 3

... Drain Current Time -- I D 100 (on 0.1 1.0 Drain Current ECH8659 0.8 1.0 0 0.5 IT13723 70 Ta=25 ° --60 ...

Page 4

... Total Gate Charge 1.8 When mounted on ceramic substrate ✕0.8mm) 2 (900mm 1.6 1.5 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature ° C ECH8659 100 1 Operation in this 3 area is limited (on Ta=25 ° Single pulse 2 When mounted on ceramic substrate (900mm ...

Page 5

... Embossed Taping Specifi cation ECH8659-TL-H ECH8659 No. A1224-5/7 ...

Page 6

... Outline Drawing ECH8659-TL-H ECH8659 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1224-6/7 ...

Page 7

... Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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